博客來-作者-Ishiwara

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		Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications 外文書 , Byung-Eun Hiroshi Ishiwara Masanori Okuyama Park , Ingram , 出版日期: 2021-03-24 優惠價: 10199 元 This book provides comprehensive coverage of the materials characteristics, process technologies, an... more	放入購物車下次再買
		Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications 外文書 , Byung-eun (EDT)/ Ishiwara Hiroshi (EDT)/ Okuyama Masanori (EDT)/ Sakai Park Shigeki (EDT)/ Yoon Sung-min (EDT) , Ingram , 出版日期: 2016-09-15 優惠價: 10799 元 This book provides comprehensive coverage of the materials characteristics, process technologies, an... more	可訂購時通知我
		About Our Ancestors 外文書 , Fanny Hagin/ Yasuyo Ishiwara (TRN) Kunio/ Mayer Yanagita , Greenwood Pub Group , 出版日期: 1988-11-01 優惠價: 1518 元	可訂購時通知我
		Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications 外文書 , Byung-Eun Hiroshi Ishiwara Masanori Okuyama Park , Ingram , 出版日期: 2020-03-24 優惠價: 10199 元 This book provides comprehensive coverage of the materials characteristics, process technologies, an... more	可訂購時通知我
		Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications 外文書 , Byung-Eun Hiroshi Ishiwara Masanori Okuyama Park , Ingram , 出版日期: 2018-06-15 優惠價: 7799 元	可訂購時通知我

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